Deposition and characterization of Cu<sub>4</sub>SnS<sub>4</sub> thin films by chemical bath deposition method

Authors

  • Anuar Kassim Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor
  • Tan Wee Tee Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor
  • Abdul Halim Abdullah Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor
  • Saravanan Nagalingam Department of Bioscience and Chemistry, Faculty of Engineering and Science, University Tunku Abdul Rahman, 53300 Kuala Lumpur
  • Ho Soon Min Department of Chemistry, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor

DOI:

https://doi.org/10.20450/mjcce.2010.178

Keywords:

thin film, chemical bath deposition, X-ray diffraction

Abstract

A low cost chemical bath deposition method has been used for the preparation of Cu4SnS4 thin films onto indium tin oxide glass substrate. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (1.5) were optimized to obtain good quality thin films. The structural, surface morphological and optical properties of thin films were studied by X-ray diffraction, an atomic force microscopy and an UV-Vis Spectrophotometer, respectively. The X-ray diffraction study revealed that the Cu4SnS4 films were polycrystalline in nature with the preferential orientation along the (221) plane. The atomic force microscopy results indicated that the films were smooth, uniform and the substrate surface was covered completely at these experimental conditions. These films exhibited p-type semiconductor behavior with the band gap energy about 1.57 eV.

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Published

2010-06-15

How to Cite

Kassim, A., Tee, T. W., Abdullah, A. H., Nagalingam, S., & Min, H. S. (2010). Deposition and characterization of Cu<sub>4</sub>SnS<sub>4</sub> thin films by chemical bath deposition method. Macedonian Journal of Chemistry and Chemical Engineering, 29(1), 97–103. https://doi.org/10.20450/mjcce.2010.178

Issue

Vol. 29 No. 1 (2010)

Section

Materials Chemistry

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